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| Preliminary RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching Features * High speed switching * Low on-state voltage * Fast recovery diode REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 C Tc = 100 C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC j-c Tj Tstg Ratings 600 30 60 30 120 100 235.8 0.53 150 -55 to +150 Unit V V A A A A W C/W C C REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 RJH60F4DPK Preliminary Electrical Characteristics (Tj = 25C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 VECF2 trr Min 4 Typ 1.4 1.7 1945 93 33 30 32 65 80 1.6 1.8 140 Max 100 1 8 1.82 2.1 Unit A A V V V pF pF pF ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = 30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note3 IC = 60 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300V VGE = 15V Note3 Rg = 5 IF = 20 A Note3 IF = 40 A Note3 IF = 20 A diF/dt = 100 A/s C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6 RJH60F4DPK Preliminary Main Characteristics Maximum Safe Operation Area 1000 120 Typical Output Characteristics Ta = 25C Pulse Test 12 V 15 V 11 V 10 V Collector Current IC (A) Collector Current IC (A) 100 10 PW 100 80 60 s 9.5 V 10 = 10 0 s 1 9V 40 20 0 8.5 V 0.1 Ta = 25C 1 shot pulse 1 10 100 1000 VGE = 8 V 0 1 2 3 4 5 0.01 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage VCE(sat) (V) 120 VCE = 10 V Pulse Test Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 3.0 Ta = 25C Pulse Test 2.4 30 A 60 A Collector Current IC (A) 100 80 60 40 1.8 Tc = 75C 1.2 IC = 15 A 25C 20 0 0 -25C 2 4 6 8 10 0.6 0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 2.4 2.0 1.6 1.2 0.8 0.4 0 -25 VGE = 15 V Pulse Test IC = 60 A 30 A 15 A Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) 8 7 6 5 4 3 2 1 0 -25 0 25 50 75 100 125 150 IC = 10 mA VCE = 10 V Gate to Emitter Cutoff Voltage VGE(off) (V) 1 mA 0 25 50 75 100 125 150 Junction Temparature Tj (C) Junction Temperature Tj (C) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 3 of 6 RJH60F4DPK Collector to Emitter Diode Forward Voltage vs. Diode Forward Current Characteristics (Typical) 100 10000 VGE = 0 V Pulse Test Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Diode Forward Current IF (A) Cies Capacitance C (pF) 80 1000 60 100 Coes 10 VGE = 0 V f = 1 MHz Ta = 25C 0 50 100 150 200 250 300 Cres 40 20 0 0 1 2 3 4 5 1 Collector to Emitter Diode Forward Voltage VECF (V) Dynamic Input Characteristics (Typical) Colloctor to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) 800 VGE VCE VCE = 600 V 300 V 16 Colloctor to Emitter Voltage VCE (V) Switching Characteristics (Typical) (1) 1000 VCC = 300 V, VGE = 15 V Rg = 5 , Ta = 25C 100 tf td(off) td(on) 10 tr 600 12 400 8 200 VCE = 600 V 300 V 0 0 20 40 60 4 IC = 30 A 80 Switching Time t (ns) 0 100 1 1 10 100 1000 Gate Charge Qg (nC) Colloctor Current IC (A) Switching Characteristics (Typical) (2) 1000 IC = 30 A, RL = 10 VGE = 15 A, Ta = 25C Switching Characteristics (Typical) (3) 1000 IC = 30 A, VGE = 15 A RL = 10 , Rg = 5 Switching Time t (ns) Switching Time t (ns) 100 tf td(off) td(on) 100 tf tr td(off) td(on) tr 10 1 10 100 10 0 20 40 60 80 100 120 140 Gate Resistance Rg () Case Temperature Tc (C) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 4 of 6 RJH60F4DPK Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) Preliminary Normalized Transient Thermal Impedance s (t) 10 Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 j - c(t) = s (t) * j - c j - c = 0.53 C/W, Tc = 25 C PDM PW T D= PW T 0.1 1 shot pulse 0.02 0.01 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) Normalized Transient Thermal Impedance s (t) 10 Tc = 25C 1 D=1 0.5 0.2 0.1 0.1 0.05 2 0.0 0.01 1 shot pulse j - c(t) = s (t) * j - c j - c = 2C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.01 10 100 Pulse Width Switching Time Test Circuit Ic Monitor RL Vin Monitor PW (s) Waveform 90% Vin 10% 90% 90% Rg Vin = 15 V D.U.T. VCC Ic td(on) ton 10% tr 10% td(off) toff tf REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 5 of 6 RJH60F4DPK Preliminary Package Dimensions Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 0.3 Unit: mm 1.5 15.6 0.3 4.8 0.2 0.5 1.0 3.2 0.2 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 0.2 3.6 0.9 1.0 18.0 0.5 0.6 0.2 5.45 0.5 5.45 0.5 Ordering Information Part No. RJH60F4DPK-00-T0 Quantity 360 pcs Shipping Container Box (Tube) REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 6 of 6 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2009. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2 |
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